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Strona główna » Instytut » Pracownicy » Sławomir Prucnal

dr Sławomir Prucnal

Zakład

Zakład Fizyki Jonów i Implantacji

Stanowisko:

st. ref. inż.tech.

Kontakt:

pokój: 058, 050
telefon: (081) 537-61-05 (081) 537-62-13
e-mail: slawomir.prucnal@umcs.pl

Publikacje: Pokaż abstrakty

  1. S. Prucnal,L. Rebohle,W. Skoprupa, Blue electroluminescence of Ytterbium clusters in SiO2 by co-operative up-conversion, Applied Physics B: Lasers and Optics, 98(), 2010, 451-454

  2. S. Prucnal,M. Turek,A. Droździel,K. Pyszniak,S. Q. Zhou,A. Kanjilal,W. Skorupa,J. Żuk, Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing, Applied Physics B: Lasers and Optics, 101(), 2010, 315-319

  3. S. Prucnal,M. Turek,A. Droździel,K. Pyszniak,A. Wójtowicz,S+Q. Zhou,A. Kanjilal,A. Shalimov,W. Skorupa,J. Żuk, Optical and microstructural properties of self-assembled InAs quantum structures in silicon, Central European Journal of Physics, DOI: 10.2478/s11534-010-0107-8(), 2010,

  4. S. Prucnal,L. Rebohle,W. Skorupa, Electroluminescence from Er and Yb co-doped silicon dioxide layers: The excitation mechanism, Journal of Non-Crystalline Solids, doi:10.1016/j.jnoncrysol.2010.12.002 (), 2010,

  5. A. N. Nazarov,S. I. Tiagulskyi,I. P. Tyagulsky,V. L. Lysenko,L. Rebohle,J. Lehmann,S. Prucnal,M. Voelskow,W. Skorupa, The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices, Journal of Applied Physics, 107(), 2010, 123112 (1-14)

  6. S. Prucnal, L. Rebohle, W. Skorupa, Electroluminescence (at 316 nm) and electrical stability of a MOS light-emitting device operated at different temperatures, Applied Physics B: Lasers and Optics, 94(), 2009, 289-293

  7. S. Prucnal, L. Rebohle, A. Kanjilal, H. Krzyżanowska, W. Skorupa, White electroluminescence from a gadolinium-doped Si-nanocluster-enriched SiO2 -SiON interface region, Electrochemical and Solid-State Letters, 12 (9)(), 2009, H333-H335

  8. S. Prucnal, A. Wójtowicz, K. Pyszniak, A. Droździel, J. Żuk, M. Turek, L. Rebohle, W. Skorupa, Defect engineering In the MOSLED structure by ion impantation, Nuclear Instruments and Methods in Physics Research B, 267(), 2009, 1311-1313

  9. M. Turek, S. Prucnal, A. Droździel, K. Pyszniak, Arc discharge ion source for europium and other refractory metals implantation, Review of Scientific Instruments, 80(), 2009, 043304 (1-5)

  10. Prucnal, S. Rebohle, L. Nazarov, A. Osiyuk, I. Tjagulskii, I. Skorupa, W., Reactivation of damaged rare earth luminescence centers in ion-implanted metal-oxide-silicon light emitting devices, Applied Physics B Lasers and Optics, B91(), 2008, 123-126

  11. Prucnal, S. Rebohle, L. Skorupa, W., Electroluminescence (at 316 nm) and electrical stability of an MOS light-emitting device operated at different temperatures, Applied Physics B Lasers and Optics, (), 2008, DOI 10.1007, s00340-008-3338-2

  12. Prucnal, S. Rebohle, L. Skorupa, W., Investigation of the temperature degradation and re-activation of the luminescent centres in rare earth implanted SiO2 layers, Solid State Phenomena, (), 2008, 131-133, 595-600

  13. Prucnal, S. Skorupa, W., Defect engineering in MOSLED structures by ion implantation, Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 109

  14. Nazarov, A. Osiyuk, I. Tyagulskyy, I. Prucnal, S. Rebohle, L. Skorupa, W., Charge Trapping in Rear-Earth Ion-Implanted SiO2-Si Light-Emitting Diodes,Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 111

  15. Rebohle, L. Lehmann, J. Prucnal, S. Nazarov, A. Tyagulskyy, I. Skorupa, W. Helm, M., The correlation between electroluminescence properties and the microstructure of Eu-implanted MOS light emitting devices, Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 369

  16. Rebohle, L. Sun, J. Prucnal, S. Nazarov, A. Tyagulskii, I. Helm, M. Skorupa, W., Huge Performance Increase of Tb-implanted MOS Light Emitting Devices with SiOxNy Layers Moderating Hot Carrier Effects,Boston MA (USA), Abstracts of MRS fall meeting 2008 , (), 2008,

  17. Rebohle, L. Cherkouk, C. Prucnal, S. Skorupa, W. Helm, M., Rare-earth implated Si-based light emitters and their use for smart biosensor application,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 27

  18. Prucnal, S. Rebohle, L. Skorupa, W., Temperature degradation and re-activation of the luminescent centres in rare earth implanted SiO2 layers,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 30

  19. Kulik, M. Żuk, J. Rzodkiewicz, W. Pyszniak, K. Droździel, A. Turek, M. Prucnal, S. Sochacki, M. Szmidt, J., Badania optyczne politypów 6H-SiC oraz 15R-SiC poddanych wielokrotnej implantacji jonami glinu w podwyższonej temperaturze, Elektronika , (), 2008, 7-8, 15-18

  20. Prucnal, S. Sun, J.M. Reuther, H. Buchal, C. Zuk, J. Skorupa, W., Electronegativity and point defect formation in the ion implanted SiO2 layers, Vacuum, 81(10), 2007, 1296-1300

  21. Prucnal S, Sun JM, Reuther H, Skorupa W, Buchal C, Strong improvement of the electroluminescence stability of SiO2 : Gd layers by potassium co-implantation, Electrochemical and Solid State Letters, 10(2), 2007, J30-J32

  22. Prucnal S, Sun JM, Muecklich A, Skorupa W, Flash lamp annealing vs rapid thermal and furnace annealing for optimized metal-oxide-silicon-based light-emitting diodes, Electrochemical and Solid State Letters, 10(2), 2007, H50-H52

  23. Nazarov AN, Osiyuk IN, Sun JM, Yankov RA, Skorupa W, Tyagulskii IP, Lysenko VS, Prucnal S, Gebel T, Rebohle L, Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes, Applied Physics B-Lasers and Optics, 87(1), 2007, 129-134

  24. Prucnal, S. Sun, J.M. Nazarov, A. Tjagulskii, I.P. Osiyuk, I.N. Fedaruk, R. Skorupa, W., Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO2 layers, Applied Physics B-Lasers and Optics, 88(), 2007, 241-244

  25. S. Prucnal, J.M. Sun, H. Reuther, C. Buchal, J. Żuk and W. Skorupa, Electronegativity and point defect formation in the ion implanted SiO2 layers, Vacuum, 81(10), 2007, 1296-1300

  26. S. Prucnal, J. M. Sun, W. Skorupa, and M. Helm, Switchable two-color electroluminescence based on a Si metal-oxide-semiconductor structure doped with Eu, Applied Physics Letters, 90(), 2007, 181121

  27. Nazarov, A. Osiyuk, I. Tyagulskii, I. Lysenko, V. Prucnal, S. Sun, J. Skorupa, W. Yankov, R. A., Charge trapping phenomena in high-efficiency metal-oxide- silicon light-emitting diodes with ion-implanted oxide, Journal of Luminescence, 121(2), 2006, 213-216

  28. Sun JM, Prucnal S, Skorupa W, Dekorsy T, Muchlich A, Helm M, Rebohle L, Gebel T, Electroluminescence properties of the Gd3+ ultraviolet luminescent centers in SiO2 gate oxide layers, Journal of Applied Physics, 99(10), 2006, 103102

  29. Sun JM, Prucnal S, Skorupa W, Helm M, Rebohle L, Gebel T, Increase of blue electroluminescence from Ce-doped SiO2 layers through sensitization by Gd3+ ions, Applied Physics Letters, 89(9), 2006, 091908

  30. Wiatrowski, A. Boratynski, B. Prucnal, S. Synowiec, Z. Zuk, J., Proton implant isolation in GaN, Vacuum, 78(2-4), 2005, 463-466

  31. Cheng, X. Q. Sun, J. M. Kogler, R. Skorupa, W. Moller, W. Prucnal, S., Photoluminescence of Er-doped SiO2 layers containing Si nanoclusters using dual ion implantation and annealing, Vacuum, 78(2-4), 2005, 667-671

  32. Prucnal, S. Cheng, X. Q. Sun, J. M. Kogler, R. Zuk, J. Skorupa, W., Optical and microstructural properties of doubly Ge-Si implanted SiO2 layers, Vacuum, 78(2-4), 2005, 693-697

  33. Skorupa W, Sun JM, Prucnal S, Rebohle L, Gebel T, Nazarov AN, Osiyuk IN, Helm M, Rare earth ion implantation for silicon based light emission, Solid State Phenomena, 108-109(), 2005, 755-760

  34. Meldizon, J. Drozdziel, A. Latuszynski, A. Prucnal, S. Pyszniak, K. Maczka, D., An ion source for solid elements with mechanical sputtering, Vacuum, 70(2-3), 2003, 447-450

  35. S. Prucnal, L. Rebohle, W. Skorupa, Blue electroluminescence of ytterbium clusters in SiO2 by co-operative up-conversion, Applied Physics B: Lasers and Optics, (), , 10.1007/s00340-009-3751-1


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