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Strona główna » Instytut » Pracownicy » Halina Krzyżanowska

dr Halina Krzyżanowska

Zakład

Zakład Fizyki Jonów i Implantacji

Stanowisko:

adiunkt

Kontakt:

pokój: 8
telefon: (081) 537-62-08
e-mail: HKRZYZAN@tytan.umcs.lublin.pl

Specjalność naukowa:

fizyka

Publikacje: Pokaż abstrakty

  1. M. Majdan,S. Pikus,A. Gajowiak,A. Gładysz-Płaska,H. Krzyżanowska,J. Żuk,M. Bujacka,, Characterization of uranium(VI) sorption by organobentonite, Applied Surface Science, 256(), 2010, 5416-5421

  2. H. Krzyżanowska, M. Kulik, J. Żuk, W. Rzodkiewicz, A. P. Kobzev, W. Skorupa, Optical investigations of germanium nanoclusters - Rich SiO2 layers produced by ion beam synthesis, Journal of Non-Crystalline Solids, 355(), 2009, 1347-1354

  3. S. Prucnal, L. Rebohle, A. Kanjilal, H. Krzyżanowska, W. Skorupa, White electroluminescence from a gadolinium-doped Si-nanocluster-enriched SiO2 -SiON interface region, Electrochemical and Solid-State Letters, 12 (9)(), 2009, H333-H335

  4. Krzyżanowska, H. Bubert, H. Żuk, J. Skorupa, W., Composition of Ge+ and Si+ implanted SiO2 /Si layers: role of oxides in nanocluster formation, Journal of Non-Crystalline Solids, 354(), 2008, 4363-4366

  5. Krzyżanowska, H. Kobzev, A. Żuk, J. Kulik, M., Hydrogen and oxygen concentration analysis of porous silicon, Journal of Non-Crystalline Solids, 354(), 2008, 4367-4374

  6. Krzyżanowska, H. Kulik, M. Rzodkiewicz, W. Kobzev, A. Skorupa, W. Żuk, J., Optical Investigations of Germanium Nanocluster-rich SiO2 Layers Produced by Ion Beam Synthesis,Ukraine, L`viv, Abstract of the 5-th International Workshop on Functional and Nanostructured Materials, (), 2008, 34

  7. Krzyżanowska, H. Żuk, J. Filiks, J. Kulik, M. Rzodkiewicz, W., Optical constants of low ion fluence implanted GaAs determined by differential reflectance and spectroscopic ellipsometry,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 93

  8. Żuk, J. Krzyżanowska, H. Kulik, M. Clouter, M. Rzodkiewicz, W., Elastic characterization of ion implanted layers by Brillouin scattering from surface acoustic waves,Dresden, Germany, Abstracts of 16-th International Conference on Ion Beam Modification of Materials IBMM 2008 , (), 2008, 254

  9. Żuk, J. Krzyżanowska, H. Kulik, M. Clouter, M. Rzodkiewicz, W., On the use surface Brillouin scattering and ellipsometry for elastic characterization of ion implanted materials, (2008), online, Wisła, Poland, Abstracts of 37-th Winter School on Wave and Quantum Acoustics, (), 2008,

  10. Kulik, M. Rzodkiewicz, W. Żuk, J. Krzyżanowska, H. Kobzev, A. Skorupa, W., Dielectric function of doubly implanted Ge+ - implanted and annealed SiO2 layers,Kazimierz Dolny, Poland, Abstracts of VII–th International Conference on Ion Implantation and Other Applications of Ions and Electrons, ION 2008, (), 2008, 31

  11. Klockenkamper, R. Becker, M. von Bohlen, A. Becker, H. W. Krzyzanowska, H. Palmetshofer, L., Near-surface density of ion-implanted Si studied by Rutherford backscattering and total-reflection x-ray fluorescence, Journal of Applied Physics, 98(3), 2005, art. no.-033517

  12. Zuk, J. Krzyzanowska, H. Clouter, M. J. Bromberek, M. Bubert, H. Rebohle, L. Skorupa, W., Brillouin scattering and x-ray photoelectron studies of germanium nanoclusters synthesized in SiO2 by ion implantation (vol 96, pg 4952, 2004), Journal of Applied Physics, 97(8), 2005, art. no.-089901

  13. Zuk, J. Krzyzanowska, H. Clouter, M. J. Bromberek, M. Bubert, H. Rebohle, L. Skorupa, W., Brillouin scattering and x-ray photoelectron studies of germanium nanoclusters synthesized in SiO2 by ion implantation, Journal of Applied Physics, 96(9), 2004, 4952-4959

  14. Krzyzanowska, H. von Bohlen, A. Klockenkamper, R., Depth profiles of shallow implanted layers by soft ion sputtering and total-reflection X-ray fluorescence, Spectrochimica Acta Part B-Atomic Spectroscopy, 58(12), 2003, 2059-2067

  15. Zuk, J. Krzyzanowska, H. Kulik, M. Liskiewicz, J. Maczka, D. Akimov, A. A. Komarov, F. F., Raman scattering evidence of medium-range order in low fluence Se+-implanted GaAs, Nuclear Instruments & Methods in Physics Research Section B- Beam Interactions with Materials and Atoms, 168(4), 2000, 521-526

  16. Krzyzanowska, H. Kulik, M. Zuk, J., Ellipsometric study of refractive index anisotropy in porous silicon, Journal of Luminescence, 80(1-4), 1998, 183-186


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